STF12NM65

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STMicroelectronics

MOSFET N-CH 650V TO220FP

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STF12NM65

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STMicroelectronics

MOSFET N-CH 650V TO220FP

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Technical Specifications

Parameters and characteristics for this part

Specification	STF12NM65

Current - Continuous Drain (Id) @ 25°C	11 A
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

STF12N50M2 Series

N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STF12NM65	11 A	Through Hole	TO-220-3 Full Pack	TO-220FP
STMicroelectronics STF120NF10	41 A	Through Hole	TO-220-3 Full Pack	TO-220FP	100 V	-55 °C	175 ░C	10 V	5200 pF	233 nC	N-Channel	10.5 mOhm	45 W	4 V	MOSFET (Metal Oxide)	20 V
STMicroelectronics STF12NM60N	10 A	Through Hole	TO-220-3 Full Pack	TO-220FP	600 V	-55 °C	150 °C	10 V	960 pF	30.5 nC	N-Channel	410 mOhm	25 W	4 V	MOSFET (Metal Oxide)	25 V
STMicroelectronics STF12N65M5	8.5 A	Through Hole	TO-220-5 Full Pack	TO-220FP	650 V			10 V		22 nC	N-Channel	430 mOhm	25 W	5 V	MOSFET (Metal Oxide)	25 V	150 °C	900 pF
STMicroelectronics STF12N50M2	10 A	Through Hole	TO-220-3 Full Pack	TO-220FP	500 V	-55 °C	150 °C	10 V	560 pF		N-Channel	380 mOhm		4 V	MOSFET (Metal Oxide)	25 V			85 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STF12N50M2 Series

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

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