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STP190N55LF3 - TO-220-3

STP190N55LF3

Active
STMicroelectronics

N-CHANNEL 55 V, 2.9 MOHM TYP., 120 A STRIPFET(TM) POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsAN4390+13
STP190N55LF3 - TO-220-3

STP190N55LF3

Active
STMicroelectronics

N-CHANNEL 55 V, 2.9 MOHM TYP., 120 A STRIPFET(TM) POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsAN4390+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP190N55LF3
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]80 nC
Input Capacitance (Ciss) (Max) @ Vds6200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)312 W
Rds On (Max) @ Id, Vgs3.7 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)18 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.35
50$ 4.24
100$ 3.63
500$ 3.23
1000$ 2.77
2000$ 2.60

Description

General part information

STP190N55LF3 Series

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.