STP190N55LF3 Series

N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package

Catalog

N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	FET Type	Mounting Type
STMicroelectronics STP190N55LF3	18 V	6200 pF	10 V	5 V	TO-220-3	3.7 mOhm	80 nC	120 A	312 W	55 V	-55 °C	175 ░C	TO-220	2.5 V	MOSFET (Metal Oxide)	N-Channel	Through Hole

Catalog

N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package

Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.