SSM6K404TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A UF6

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K404TU,LF

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.9 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology
Toshiba Semiconductor and Storage SSM6K404TU,LF	UF6	3 A	150 °C	N-Channel	Surface Mount	4 V	1.5 V	6-SMD Flat Leads	5.9 nC	500 mW	1 V	10 V	55 mOhm	400 pF	20 V	MOSFET (Metal Oxide)

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General part information

N-Channel 20 V 3A (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources