MOSFET N-CH 20V 3A UF6
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | UF6 | 3 A | 150 °C | N-Channel | Surface Mount | 4 V | 1.5 V | 6-SMD Flat Leads | 5.9 nC | 500 mW | 1 V | 10 V | 55 mOhm | 400 pF | 20 V | MOSFET (Metal Oxide) |