Specification	BSZ0910NDXTMA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	9.5 A
Current - Continuous Drain (Id) (Tc)	25 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	4.5 V
Gate Charge (Max)	5.6 nC, 5.6 nC
Input Capacitance (Ciss) (Max)	800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Name	PG-WISON-8
Power - Max (Ta)	1.9 W
Power - Max (Tc)	31 W
Rds On (Max)	9.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V

BSZ0910 Series

Part	Package Name	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Technology	Power - Max (Tc)	Power - Max (Ta)	FET Feature	FET Feature Drive Voltage	Channel Count	Configuration	Configuration - Features
INFINEON BSZ0910LSATMA1	PG-TDSON-8 FL	20 V	Surface Mount	N-Channel	10 V	4.5 V	-55 °C	150 °C	8-PowerTDFN	18 A	40 A	2 V	4.5 mOhm	30 V	1100 pF	17 nC	2.1 W 37 W	MOSFET (Metal Oxide)
INFINEON BSZ0910NDXTMA1	PG-WISON-8		Surface Mount				-55 °C	150 °C	8-PowerVDFN	9.5 A	25 A	2 V	9.5 mOhm	30 V	800 pF	5.6 nC 5.6 nC		MOSFET (Metal Oxide)	31 W	1.9 W	Logic Level Gate	4.5 V	2	N-Channel	Dual

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