BSZ0910 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.5 MOHM;
| Part | Package Name | Vgs (Max) | Mounting Type | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Power Dissipation (Max) | Technology | Power - Max (Tc) | Power - Max (Ta) | FET Feature | FET Feature Drive Voltage | Channel Count | Configuration | Configuration - Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | PG-TDSON-8 FL | 20 V | Surface Mount | N-Channel | 10 V | 4.5 V | -55 °C | 150 °C | 8-PowerTDFN | 18 A | 40 A | 2 V | 4.5 mOhm | 30 V | 1100 pF | 17 nC | 2.1 W 37 W | MOSFET (Metal Oxide) | |||||||
 INFINEON | PG-WISON-8 | Surface Mount | -55 °C | 150 °C | 8-PowerVDFN | 9.5 A | 25 A | 2 V | 9.5 mOhm | 30 V | 800 pF | 5.6 nC 5.6 nC | MOSFET (Metal Oxide) | 31 W | 1.9 W | Logic Level Gate | 4.5 V | 2 | N-Channel | Dual |