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SOT363

2N7002BKS,115

Active
Nexperia USA Inc.

60 V, 300 MA DUAL N-CHANNEL TRENCH MOSFET

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SOT363

2N7002BKS,115

Active
Nexperia USA Inc.

60 V, 300 MA DUAL N-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

2N7002 Series

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification2N7002BKS,115
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)300 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Max)0.6 nC, 0.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)50 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-TSSOP, SC-88, SOT-363
Package Name6-TSSOP
Power - Max295 mW
QualificationAEC-Q101
Rds On (Max)1.6 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.1 V

Pricing

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CAD

3D models and CAD resources for this part