2N7002NXBKR

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Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 60V 0.33A 3-PIN SOT-23 T/R

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2N7002NXBKR

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 60V 0.33A 3-PIN SOT-23 T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

2N7002 Series

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002NXBKR

Current - Continuous Drain (Id) (Ta)	270 mA
Current - Continuous Drain (Id) (Tc)	330 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	1 nC
Input Capacitance (Ciss) (Max)	23.6 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	310 mW, 1.67 W
Rds On (Max)	2.8 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

2N7002 Series

60 V, 340 mA dual N-channel Trench MOSFET

Part	FET Type	Operating Temperature	Grade	Technology	Qualification	Power Dissipation (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	FET Feature	Current - Continuous Drain (Id)	Channel Count	Configuration	Configuration - Features	Power - Max
Nexperia USA Inc. 2N7002BKM,315	N-Channel	150 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q101	360 mW	SOT-883	10 V	1.6 Ohm	450 mA	SC-101 SOT-883	20 V	2.1 V	0.6 nC	60 V	Surface Mount	50 pF
Nexperia USA Inc. 2N7002NXAKR	N-Channel			MOSFET (Metal Oxide)		1.33 W 265 mW	TO-236AB		4.5 Ohm	190 mA	SC-59 SOT-23-3 TO-236-3	20 V	2.1 V	0.43 nC	60 V	Surface Mount	20 pF 20 pF	-55 °C	150 °C	10 V	5 V	300 mA
Nexperia USA Inc. 2N7002PS,115		150 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q100		6-TSSOP		1.6 Ohm		6-TSSOP SC-88 SOT-363		2.4 V	0.8 nC	60 V	Surface Mount	50 pF						Logic Level Gate	320 mA	2	N-Channel	Dual	420 mW
Nexperia USA Inc. 2N7002F,215	N-Channel			MOSFET (Metal Oxide)		830 mW	TO-236AB		2 Ohm	475 mA	SC-59 SOT-23-3 TO-236-3	30 V	2.5 V	0.69 nC 0.69 nC	60 V	Surface Mount	50 pF	-55 °C	150 °C	10 V	4.5 V
Nexperia USA Inc. 2N7002BKS,115		150 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q101		6-TSSOP		1.6 Ohm	300 mA	6-TSSOP SC-88 SOT-363		2.1 V	0.6 nC 0.6 nC	60 V	Surface Mount	50 pF						Logic Level Gate		2	N-Channel	Dual	295 mW
Nexperia USA Inc. 2N7002NXBKR	N-Channel			MOSFET (Metal Oxide)		1.67 W 310 mW	TO-236AB		2.8 Ohm	270 mA	SC-59 SOT-23-3 TO-236-3	20 V	2.1 V	1 nC	60 V	Surface Mount	23.6 pF	-55 °C	150 °C	10 V	5 V	330 mA
Nexperia USA Inc. 2N7002HR	N-Channel		Automotive	MOSFET (Metal Oxide)	AEC-Q101	830 mW	TO-236AB		5 Ohm		SC-59 SOT-23-3 TO-236-3	20 V	2.5 V		60 V	Surface Mount	50 pF	-65 °C	150 °C	10 V	4.5 V	300 mA
Nexperia USA Inc. 2N7002BKV,115		150 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q101		SOT-666		1.6 Ohm		SOT-563 SOT-666		2.1 V	0.6 nC 0.6 nC	60 V	Surface Mount	50 pF						Logic Level Gate	340 mA	2	N-Channel	Dual	350 mW
Nexperia USA Inc. 2N7002BK,215	N-Channel	150 °C	Automotive	MOSFET (Metal Oxide)	AEC-Q101	370 mW	TO-236AB	10 V	1.6 Ohm	350 mA	SC-59 SOT-23-3 TO-236-3	20 V	2.1 V	0.6 nC	60 V	Surface Mount	50 pF
Nexperia USA Inc. 2N7002BKS/ZLX		150 °C		MOSFET (Metal Oxide)			6-TSSOP		1.6 Ohm	300 mA	6-TSSOP SC-88 SOT-363		2.1 V	0.6 nC 0.6 nC	60 V	Surface Mount	50 pF						Logic Level Gate		2	N-Channel	Dual	1.04 W