Specification	IPB029N06N3GE8187ATMA1

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	165 nC
Input Capacitance (Ciss) (Max)	13000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	188 W
Rds On (Max)	3.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPB029 Series

Part	Vgs(th) (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package Name
INFINEON IPB029N06N3GATMA1	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13000 pF	2.9 mOhm	188 W	Surface Mount	60 V	N-Channel	120 A	10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	165 nC	PG-TO263-3
INFINEON IPB029N06N3GE8187ATMA1	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13000 pF	3.2 mOhm	188 W	Surface Mount	60 V	N-Channel	120 A	10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	165 nC	PG-TO263-3

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