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IPB029N06N3GATMA1

IPB029N06N3GATMA1

LTB
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; D2PAK TO-263 PACKAGE; 2.9 MOHM;

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IPB029N06N3GATMA1

IPB029N06N3GATMA1

LTB
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; D2PAK TO-263 PACKAGE; 2.9 MOHM;

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Description

General part information

IPB029 Series

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB029N06N3GATMA1
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)165 nC
Input Capacitance (Ciss) (Max)13000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3
Power Dissipation (Max)188 W
Rds On (Max)2.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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