SSM6N7002KFU,LXH

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A US6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A US6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N7002KFU,LXH

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	285 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Package / Case	Technology	FET Feature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification
Toshiba Semiconductor and Storage SSM6N7002BFE,LM	SOT-563 SOT-666	MOSFET (Metal Oxide)	Logic Level Gate	2.1 Ohm	17 pF	150 °C	200 mA	Surface Mount	2 N-Channel (Dual)	60 V	3.1 V	ES6
Toshiba Semiconductor and Storage SSM6N7002KFU,LXH	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)		1.5 Ohm		150 °C	300 mA	Surface Mount	2 N-Channel (Dual)	60 V	2.1 V	US6	0.6 nC	285 mW	40 pF	Automotive	AEC-Q101
Toshiba Semiconductor and Storage SSM6N7002BFU,LF	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	Logic Level Gate	2.1 Ohm	17 pF	150 °C	200 mA	Surface Mount	2 N-Channel (Dual)	60 V	3.1 V	US6		300 mW
Toshiba Semiconductor and Storage SSM6N7002BFU(T5L,F	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	Logic Level Gate	2.1 Ohm	17 pF	150 °C	200 mA	Surface Mount	2 N-Channel (Dual)	60 V	3.1 V	US6		300 mW

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General part information

Mosfet Array 60V 300mA (Ta) 285mW (Ta) Surface Mount US6

Technical documentation and resources