SSM6N7002 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)

Catalog

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)

Part	Current - Continuous Drain (Id)	Vgs(th) (Max)	Operating Temperature	Rds On (Max)	Power - Max	Technology	Channel Count	Configuration	Configuration - Features	FET Feature	Input Capacitance (Ciss) (Max)	Package Name	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Power - Max (Ta)	Qualification	Gate Charge (Max)	Grade	Current - Continuous Drain (Id) (Ta)
Toshiba Semiconductor and Storage SSM6N7002BFE,LM	200 mA	3.1 V	150 °C	2.1 Ohm	150 mW	MOSFET (Metal Oxide)	2	N-Channel	Dual	Logic Level Gate	17 pF	ES6	SOT-563 SOT-666	60 V	Surface Mount
Toshiba Semiconductor and Storage SSM6N7002KFU,LXH		2.1 V	150 °C	1.5 Ohm		MOSFET (Metal Oxide)	2	N-Channel	Dual		40 pF	US6	6-TSSOP SC-88 SOT-363	60 V	Surface Mount	285 mW	AEC-Q101	0.6 nC 0.6 nC	Automotive	300 mA
Toshiba Semiconductor and Storage SSM6N7002KFU,LF	300 mA	2.1 V	150 °C 150 °C	1.5 Ohm	285 mW	MOSFET (Metal Oxide)	2	N-Channel	Dual		40 pF	US6	6-TSSOP SC-88 SOT-363	60 V	Surface Mount			0.6 nC 0.6 nC
Toshiba Semiconductor and Storage SSM6N7002BFU,LF	200 mA	3.1 V	150 °C	2.1 Ohm	300 mW	MOSFET (Metal Oxide)	2	N-Channel	Dual	Logic Level Gate	17 pF	US6	6-TSSOP SC-88 SOT-363	60 V	Surface Mount
Toshiba Semiconductor and Storage SSM6N7002BFU(T5L,F	200 mA	3.1 V	150 °C	2.1 Ohm	300 mW	MOSFET (Metal Oxide)	2	N-Channel	Dual	Logic Level Gate	17 pF	US6	6-TSSOP SC-88 SOT-363	60 V	Surface Mount

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 60 V, 0.2 A, 2.1 Ω@10V, SOT-563(ES6)