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STD26NF10 - ONSEMI MJD31T4G

STD26NF10

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 100 V, 25 A, 0.033 OHM, TO-252 (DPAK), SURFACE MOUNT

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STD26NF10 - ONSEMI MJD31T4G

STD26NF10

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 100 V, 25 A, 0.033 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD26NF10
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds1550 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]100 W
Rds On (Max) @ Id, Vgs38 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.61
10$ 1.32
100$ 1.03
500$ 0.87
1000$ 0.71
Digi-Reel® 1$ 1.61
10$ 1.32
100$ 1.03
500$ 0.87
1000$ 0.71
Tape & Reel (TR) 2500$ 0.67
5000$ 0.64
12500$ 0.61
NewarkEach (Supplied on Cut Tape) 1$ 2.04
10$ 1.62
25$ 1.50
50$ 1.39
100$ 1.27
250$ 1.19
500$ 1.10
1000$ 0.99

Description

General part information

STD26P3LLH6 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements.