STD26P3LLH6 Series

P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

Catalog

P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STD26NF10	38 mOhm	20 V	55 nC	100 V	100 W	25 A	4 V	Surface Mount	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	1550 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK
STMicroelectronics STD26P3LLH6	30 mOhm	20 V		30 V		12 A	2.5 V	Surface Mount	P-Channel			MOSFET (Metal Oxide)		4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	1450 pF	175 °C	40 W	12 nC

Catalog

P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements.