STFI5N80K5

Obsolete

STMicroelectronics

MOSFET N-CH 800V 4A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 800V 4A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI5N80K5

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	177 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	1.75 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
STMicroelectronics STFI5N80K5	4 A	TO-281 (I2PAKFP)	10 V	30 V	5.5 nC	800 V	177 pF	N-Channel	MOSFET (Metal Oxide)	1.75 Ohm	20 W	TO-262-3 Full Pack I2PAK	Through Hole	-55 °C	150 °C	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 4A (Tc) 20W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources