Beta
⌘K
MOSFET N-CH 800V 4A I2PAKFP
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 4 A | TO-281 (I2PAKFP) | 10 V | 30 V | 5.5 nC | 800 V | 177 pF | N-Channel | MOSFET (Metal Oxide) | 1.75 Ohm | 20 W | TO-262-3 Full Pack I2PAK | Through Hole | -55 °C | 150 °C | 5 V |