DMN4030LK3-13

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN4030LK3-13

Current - Continuous Drain (Id) @ 25°C	9.4 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	604 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.14 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Diodes Inc DMN4030LK3-13	2.14 W	9.4 A	12.9 nC	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	30 mOhm	40 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V	TO-252-3	N-Channel	MOSFET (Metal Oxide)	604 pF

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General part information

N-Channel Enhancement Mode MOSFET

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