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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.14 W | 9.4 A | 12.9 nC | 3 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 30 mOhm | 40 V | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | TO-252-3 | N-Channel | MOSFET (Metal Oxide) | 604 pF |