BUK6D125-60EX

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Nexperia USA Inc.

MOSFET N-CH 60V 2.7A/7.4A 6DFN

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BUK6D125-60EX

Active

Nexperia USA Inc.

MOSFET N-CH 60V 2.7A/7.4A 6DFN

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D125-60E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D125-60EX

Current - Continuous Drain (Id) (Ta)	2.7 A
Current - Continuous Drain (Id) (Tc)	7.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	196 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	15 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

BUK6D125-60E Series

60 V, N-channel Trench MOSFET

Part	Package / Case	Qualification	Technology	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Gate Charge (Max)	Mounting Type	Vgs(th) (Max)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade
Nexperia USA Inc. BUK6D125-60EX	6-UDFN Exposed Pad	AEC-Q101	MOSFET (Metal Oxide)	2.7 A	7.4 A	125 mOhm	60 V	2 W 15 W	-55 °C	175 °C	DFN2020MD-6	6 nC	Surface Mount	2.7 V	N-Channel	20 V	196 pF	10 V	4.5 V	Automotive