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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Qualification | Technology | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Rds On (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Gate Charge (Max) | Mounting Type | Vgs(th) (Max) | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6-UDFN Exposed Pad | AEC-Q101 | MOSFET (Metal Oxide) | 2.7 A | 7.4 A | 125 mOhm | 60 V | 2 W 15 W | -55 °C | 175 °C | DFN2020MD-6 | 6 nC | Surface Mount | 2.7 V | N-Channel | 20 V | 196 pF | 10 V | 4.5 V | Automotive |