IPP041N12N3GXKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0035 OHM, TO-220, THROUGH HOLE

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IPP041N12N3GXKSA1

Active

Infineon Technologies

POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0035 OHM, TO-220, THROUGH HOLE

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP041N12N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	211 nC
Input Capacitance (Ciss) (Max) @ Vds	13800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP041 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)
Infineon Technologies IPP041N12N3GXKSA1	13800 pF	120 A	300 W	10 V	20 V	TO-220-3	211 nC	Through Hole	120 V	4 V	-55 °C	175 ░C	PG-TO220-3	MOSFET (Metal Oxide)	4.1 mOhm	N-Channel
Infineon Technologies IPP041N04NGXKSA1	4500 pF			10 V	20 V	TO-220-3	56 nC	Through Hole	40 V	4 V	-55 °C	175 ░C	PG-TO220-3-1	MOSFET (Metal Oxide)	4.1 mOhm	N-Channel	94 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.35
		10	$ 3.57
		100	$ 2.56
		500	$ 2.13
		1000	$ 2.07
Newark	Each	1	$ 4.71
		10	$ 4.07
		25	$ 2.76
		50	$ 2.63
		100	$ 2.51
		250	$ 2.29
		500	$ 2.07

Description

General part information

IPP041 Series

The IPP041N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.