Beta
⌘K
POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0035 OHM, TO-220, THROUGH HOLE
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 13800 pF | 120 A | 300 W | 10 V | 20 V | TO-220-3 | 211 nC | Through Hole | 120 V | 4 V | -55 °C | 175 ░C | PG-TO220-3 | MOSFET (Metal Oxide) | 4.1 mOhm | N-Channel | |
Infineon Technologies | 4500 pF | 10 V | 20 V | TO-220-3 | 56 nC | Through Hole | 40 V | 4 V | -55 °C | 175 ░C | PG-TO220-3-1 | MOSFET (Metal Oxide) | 4.1 mOhm | N-Channel | 94 W |