AUIRFN7110TR

Obsolete

Infineon Technologies

MOSFET N-CH 100V 58A 8PQFN

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 100V 58A 8PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFN7110TR

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	125 W, 4.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Grade	Qualification	Supplier Device Package
Infineon Technologies AUIRFN7110TR	14.5 mOhm	4.3 W 125 W	-55 °C	175 ░C	3050 pF	MOSFET (Metal Oxide)	20 V	100 V	8-PowerTDFN	74 nC	N-Channel	10 V	Surface Mount	58 A	4 V	Automotive	AEC-Q101	8-PQFN (5x6)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 58A (Tc) 4.3W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

Technical documentation and resources