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MOSFET N-CH 100V 58A 8PQFN
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Grade | Qualification | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 14.5 mOhm | 4.3 W 125 W | -55 °C | 175 ░C | 3050 pF | MOSFET (Metal Oxide) | 20 V | 100 V | 8-PowerTDFN | 74 nC | N-Channel | 10 V | Surface Mount | 58 A | 4 V | Automotive | AEC-Q101 | 8-PQFN (5x6) |