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IXTA2N80 - TO-263AB

IXTA2N80

Obsolete
IXYS

MOSFET N-CH 800V 2A TO263

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IXTA2N80 - TO-263AB

IXTA2N80

Obsolete
IXYS

MOSFET N-CH 800V 2A TO263

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA2N80
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]54 W
Rds On (Max) @ Id, Vgs6.2 Ohm
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXTA2 Series

N-Channel 800 V 2A (Tc) 54W (Tc) Surface Mount TO-263AA

Documents

Technical documentation and resources

No documents available