MOSFET N-CH 800V 2A TO263
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 20 V | 6.2 Ohm | -55 °C | 150 °C | 440 pF | 22 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | TO-263AA | MOSFET (Metal Oxide) | Surface Mount | 5.5 V | 54 W | 800 V | N-Channel | 2 A | |
IXYS | 20 V | 7 Ohm | -55 °C | 150 °C | 825 pF | 18 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | TO-263AA | MOSFET (Metal Oxide) | Surface Mount | 4.5 V | 100 W | 1000 V | N-Channel | 2 A | |
IXYS | 30 V | 6 Ohm | -55 °C | 150 °C | 440 pF | 10.6 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | TO-263AA | MOSFET (Metal Oxide) | Surface Mount | 5.5 V | 800 V | N-Channel | 2 A | 70 W |