Specification	SI4825DY-T1-E3

Current - Continuous Drain (Id) (Ta)	8.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	71 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3 V

SI4825 Series

Part	Power Dissipation (Max)	Package Length	Package Name	Package Width	Vgs(th) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Mounting Type	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4825DDY-T1-GE3	2.7 W 5 W	0.154 in	8-SOIC	3.9 mm	2.5 V	25 V	30 V	2550 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	86 nC	10 V	4.5 V	14.9 A	P-Channel	12.5 mOhm
Vishay Dale SI4825DY-T1-GE3	1.5 W	0.154 in	8-SOIC	3.9 mm	3 V	25 V	30 V		-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	71 nC	10 V	4.5 V		P-Channel	14 mOhm	8.1 A
Vishay Dale SI4825DY-T1-E3	1.5 W	0.154 in	8-SOIC	3.9 mm	3 V	25 V	30 V		-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	71 nC	10 V	4.5 V		P-Channel	14 mOhm	8.1 A

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