SI4825 Series

Catalog

MOSFET TRANSISTOR, P CHANNEL, -14.9 A, -30 V, 0.01 OHM, -10 V, -1.4 V

Part	Power Dissipation (Max)	Package Length	Package Name	Package Width	Vgs(th) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Mounting Type	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI4825DDY-T1-GE3	2.7 W 5 W	0.154 in	8-SOIC	3.9 mm	2.5 V	25 V	30 V	2550 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	86 nC	10 V	4.5 V	14.9 A	P-Channel	12.5 mOhm
Vishay Dale SI4825DY-T1-GE3	1.5 W	0.154 in	8-SOIC	3.9 mm	3 V	25 V	30 V		-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	71 nC	10 V	4.5 V		P-Channel	14 mOhm	8.1 A
Vishay Dale SI4825DY-T1-E3	1.5 W	0.154 in	8-SOIC	3.9 mm	3 V	25 V	30 V		-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	71 nC	10 V	4.5 V		P-Channel	14 mOhm	8.1 A