Specification	IDH08G65C5XKSA1

Capacitance	250 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage	280 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-220-2
Package Name	PG-TO220-2-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.7 V

IDH08G65 Series

Part	Capacitance	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Technology	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package / Case	Mounting Type	Package Name
INFINEON IDH08G65C6XKSA1	401 pF	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	27 µA	1.35 V	650 V	20 A	500 mA	No Recovery Time	500 mA 500 mA	TO-220-2	Through Hole	PG-TO220-2
INFINEON IDH08G65C5XKSA1	250 pF	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	280 µA	1.7 V	650 V	8 A	500 mA	No Recovery Time	500 mA 500 mA	TO-220-2	Through Hole	PG-TO220-2-2
INFINEON IDH08G65C5XKSA2	250 pF	175 °C	-55 °C	SiC (Silicon Carbide) Schottky	140 µA	1.7 V	650 V	8 A	500 mA	No Recovery Time	500 mA 500 mA	TO-220-2	Through Hole	PG-TO220-2-1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources