Description
General part information
IDH08G65 Series
TheCoolSiC™ Schottky diode 650V G6is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qcx VF).
Technical Specifications
Parameters and characteristics for this part
| Specification | IDH08G65C6XKSA1 |
|---|---|
| Capacitance | 401 pF |
| Current - Average Rectified (Io) | 20 A |
| Current - Reverse Leakage | 27 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | PG-TO220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.35 V |
Pricing
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CAD
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Documents
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