SSM6P35AFU,LF

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

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Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6P35AFU,LF

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	42 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Feature	FET Feature	Package / Case	Vgs(th) (Max) @ Id	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6P35AFU,LF	MOSFET (Metal Oxide)	2 P-Channel	42 pF	US6	20 V	Surface Mount	150 °C	250 mA	1.4 Ohm	1.2 V	Logic Level Gate	6-TSSOP SC-88 SOT-363	1 V	285 mW
Toshiba Semiconductor and Storage SSM6P35AFE,LF	MOSFET (Metal Oxide)	2 P-Channel	42 pF	ES6	20 V	Surface Mount	150 °C	250 mA	1.4 Ohm	1.2 V	Logic Level Gate	SOT-563 SOT-666	1 V	150 mW
Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)	MOSFET (Metal Oxide)	2 P-Channel	12.2 pF	ES6	20 V	Surface Mount	150 °C	100 mA	8 Ohm		Logic Level Gate	SOT-563 SOT-666	1 V

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General part information

Mosfet Array 20V 250mA (Ta) 285mW (Ta) Surface Mount US6

Technical documentation and resources