MOSFET 2P-CH 20V 0.25A US6
| Part | Technology | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Feature | FET Feature | Package / Case | Vgs(th) (Max) @ Id | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 2 P-Channel | 42 pF | US6 | 20 V | Surface Mount | 150 °C | 250 mA | 1.4 Ohm | 1.2 V | Logic Level Gate | 6-TSSOP SC-88 SOT-363 | 1 V | 285 mW |
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 2 P-Channel | 42 pF | ES6 | 20 V | Surface Mount | 150 °C | 250 mA | 1.4 Ohm | 1.2 V | Logic Level Gate | SOT-563 SOT-666 | 1 V | 150 mW |
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 2 P-Channel | 12.2 pF | ES6 | 20 V | Surface Mount | 150 °C | 100 mA | 8 Ohm | Logic Level Gate | SOT-563 SOT-666 | 1 V |