2N7002E-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 240MA SOT23-3

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Vishay Siliconix

MOSFET N-CH 60V 240MA SOT23-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N7002E-T1-E3	2N7002 Series

Current - Continuous Drain (Id) @ 25°C	240 mA	115 - 340 mA
Drain to Source Voltage (Vdss)	60 V	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
Drive Voltage (Max Rds On, Min Rds On)	-	5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	21 pF	21 - 50 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature	-	150 °C
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	-	200 mW
Power Dissipation (Max) [Max]	350 mW	350 mW
Rds On (Max) @ Id, Vgs	3 Ohm	2 - 7.5 Ohm
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	2.5 V	2.5 V

MOSFET N-CH 60V 115MA TO236

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	FET Type	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
Vishay Siliconix 2N7002-T1-E3	7.5 Ohm	MOSFET (Metal Oxide)	SC-59, SOT-23-3, TO-236-3	N-Channel	20 V	Surface Mount	50 pF	60 V	2.5 V	10 V	5 V	115 mA	-55 °C	150 °C	200 mW
Vishay Siliconix 2N7002E	5 Ohm	MOSFET (Metal Oxide)	SC-59, SOT-23-3, TO-236-3	N-Channel	20 V	Surface Mount	21 pF	60 V	2.5 V			340 mA				4.5 V, 10 V	SOT-23-3 (TO-236)	350 mW	0.6 nC	150 °C
Vishay Siliconix 2N7002K-T1-GE3	2 Ohm	MOSFET (Metal Oxide)	SC-59, SOT-23-3, TO-236-3	N-Channel	20 V	Surface Mount	30 pF	60 V	2.5 V			300 mA	-55 °C	150 °C		4.5 V, 10 V	SOT-23-3 (TO-236)	350 mW	0.6 nC
Vishay Siliconix 2N7002E-T1-E3	3 Ohm	MOSFET (Metal Oxide)	SC-59, SOT-23-3, TO-236-3	N-Channel	20 V	Surface Mount	21 pF	60 V	2.5 V			240 mA	-55 °C	150 °C		4.5 V, 10 V	SOT-23-3 (TO-236)	350 mW	0.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources