MOSFET N-CH 60V 115MA TO236
| Part | Rds On (Max) @ Id, Vgs | Technology | Package / Case | FET Type | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix 2N7002-T1-E3 | 7.5 Ohm | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | N-Channel | 20 V | Surface Mount | 50 pF | 60 V | 2.5 V | 10 V | 5 V | 115 mA | -55 °C | 150 °C | 200 mW | |||||
Vishay Siliconix 2N7002E | 5 Ohm | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | N-Channel | 20 V | Surface Mount | 21 pF | 60 V | 2.5 V | 340 mA | 4.5 V, 10 V | SOT-23-3 (TO-236) | 350 mW | 0.6 nC | 150 °C | |||||
Vishay Siliconix 2N7002K-T1-GE3 | 2 Ohm | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | N-Channel | 20 V | Surface Mount | 30 pF | 60 V | 2.5 V | 300 mA | -55 °C | 150 °C | 4.5 V, 10 V | SOT-23-3 (TO-236) | 350 mW | 0.6 nC | ||||
Vishay Siliconix 2N7002E-T1-E3 | 3 Ohm | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | N-Channel | 20 V | Surface Mount | 21 pF | 60 V | 2.5 V | 240 mA | -55 °C | 150 °C | 4.5 V, 10 V | SOT-23-3 (TO-236) | 350 mW | 0.6 nC |