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2N7002-T1-E3 - SOT-23-3

2N7002-T1-E3

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 115MA TO236

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2N7002-T1-E3 - SOT-23-3

2N7002-T1-E3

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 115MA TO236

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N7002-T1-E3
Current - Continuous Drain (Id) @ 25°C115 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)200 mW
Rds On (Max) @ Id, Vgs7.5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.91
10$ 0.57
100$ 0.37
500$ 0.28
1000$ 0.26
Digi-Reel® 1$ 0.91
10$ 0.57
100$ 0.37
500$ 0.28
1000$ 0.26
Tape & Reel (TR) 3000$ 0.22
6000$ 0.20
9000$ 0.19
15000$ 0.18
21000$ 0.18
30000$ 0.17

Description

General part information

2N7002 Series

N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Documents

Technical documentation and resources