MOSFET N-CH 60V 240MA SOT23-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | -55 °C  | 150 °C  | 350 mW  | 21 pF  | 20 V  | 0.6 nC  | SOT-23-3 (TO-236)  | 60 V  | N-Channel  | 3 Ohm  | 240 mA  | SC-59  SOT-23-3  TO-236-3  | MOSFET (Metal Oxide)  | 2.5 V  | 4.5 V  10 V  | Surface Mount  | ||||
Vishay General Semiconductor - Diodes Division  | 350 mW  | 21 pF  | 20 V  | 0.6 nC  | SOT-23-3 (TO-236)  | 60 V  | N-Channel  | 5 Ohm  | 340 mA  | SC-59  SOT-23-3  TO-236-3  | MOSFET (Metal Oxide)  | 2.5 V  | 4.5 V  10 V  | Surface Mount  | 150 °C  | |||||
Vishay General Semiconductor - Diodes Division  | -55 °C  | 150 °C  | 50 pF  | 20 V  | 60 V  | N-Channel  | 7.5 Ohm  | 115 mA  | SC-59  SOT-23-3  TO-236-3  | MOSFET (Metal Oxide)  | 2.5 V  | Surface Mount  | 10 V  | 5 V  | 200 mW  | |||||
Vishay General Semiconductor - Diodes Division  | -55 °C  | 150 °C  | 350 mW  | 30 pF  | 20 V  | 0.6 nC  | SOT-23-3 (TO-236)  | 60 V  | N-Channel  | 2 Ohm  | 300 mA  | SC-59  SOT-23-3  TO-236-3  | MOSFET (Metal Oxide)  | 2.5 V  | 4.5 V  10 V  | Surface Mount  |