IRF7350TRPBF

Obsolete

Infineon Technologies

MOSFET N/P-CH 100V 2.1A/1.5A 8SO

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Obsolete

Infineon Technologies

MOSFET N/P-CH 100V 2.1A/1.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7350TRPBF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	2.1 A
Current - Continuous Drain (Id) @ 25°C [Min]	1.5 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package
Infineon Technologies IRF7350TRPBF	100 V	380 pF	210 mOhm	2.1 A	1.5 A	MOSFET (Metal Oxide)	-55 °C	150 °C	2 W	N and P-Channel	28 nC	Surface Mount	4 V	8-SOIC	3.9 mm	0.154 in	8-SO
Infineon Technologies IRF7350PBF	100 V	380 pF	210 mOhm	2.1 A	1.5 A	MOSFET (Metal Oxide)	-55 °C	150 °C	2 W	N and P-Channel	28 nC	Surface Mount	4 V	8-SOIC	3.9 mm	0.154 in	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$