MOSFET N/P-CH 100V 2.1A/1.5A 8SO
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | 380 pF | 210 mOhm | 2.1 A | 1.5 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 W | N and P-Channel | 28 nC | Surface Mount | 4 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SO |
Infineon Technologies | 100 V | 380 pF | 210 mOhm | 2.1 A | 1.5 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 W | N and P-Channel | 28 nC | Surface Mount | 4 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SO |