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SQJ182EP-T1_GE3

SQJ182EP-T1_GE3

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Vishay Dale

MOSFETS N-CHANNEL 80-V (D-S) 175C MOSFET

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SQJ182EP-T1_GE3

SQJ182EP-T1_GE3

Active
Vishay Dale

MOSFETS N-CHANNEL 80-V (D-S) 175C MOSFET

Find alt

Description

General part information

SQJ Series

N-Channel 80 V 210A (Tc) 395W (Tc) Surface Mount PowerPAK® SO-8

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ182EP-T1_GE3
Current - Continuous Drain (Id) (Tc)210 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)96 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)5392 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)395 W
QualificationAEC-Q101
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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