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SQJ570EP-T1_GE3

SQJ570EP-T1_GE3

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Vishay Dale

MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED

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SQJ570EP-T1_GE3

SQJ570EP-T1_GE3

Active
Vishay Dale

MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED

Find alt

Description

General part information

SQJ Series

MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ570EP-T1_GE3
ConfigurationN, P-Channel
Current - Continuous Drain (Id) (Tc)15 A, 15 A
Current - Continuous Drain (Id) (Tc) (2)9.5 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Max)20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)600 pF, 650 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8 Dual
Package NamePowerPAK® SO-8 Dual
Power - Max27 W
QualificationAEC-Q101
Rds On (Max)146 mOhm, 45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    SQJ570EP-T1_GE3 | Vishay Dale | Zenode.ai