
SQJ570EP-T1_GE3
ActiveVishay Dale
MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED

SQJ570EP-T1_GE3
ActiveVishay Dale
MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED
Description
General part information
SQJ Series
MOSFETS N CH P CH 100/-100V AEC-Q101 QUALIFIED
Technical Specifications
Parameters and characteristics for this part
| Specification | SQJ570EP-T1_GE3 |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Tc) | 15 A, 15 A |
| Current - Continuous Drain (Id) (Tc) (2) | 9.5 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 20 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 600 pF, 650 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 Dual |
| Package Name | PowerPAK® SO-8 Dual |
| Power - Max | 27 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 146 mOhm, 45 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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