Specification	CLS02(T6L,CLAR,Q)

Capacitance	420 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	L-FLAT™
Package Length	4 mm
Package Name	L-FLAT™
Package Width	5.5 mm
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	40 V
Voltage - Forward (Vf) (Max)	550 mV

CLS02 Series

Part	Operating Temperature - Junction (Min)	Operating Temperature - Junction (Max)	Capacitance	Package Name	Package Length	Package Width	Technology	Mounting Type	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Current - Average Rectified (Io)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case
Toshiba Semiconductor and Storage CLS02(T6L,CLAR,Q)	-40 °C	125 °C	420 pF	L-FLAT™	4 mm	5.5 mm	Schottky	Surface Mount	550 mV	40 V	1 mA	10 A	500 ns	200 mA	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16R,Q)	-40 °C	125 °C	420 pF	L-FLAT™	4 mm	5.5 mm	Schottky	Surface Mount	550 mV	40 V	1 mA	10 A	500 ns	200 mA	L-FLAT™
Toshiba Semiconductor and Storage CLS02(T6L,CANO-O,Q	-40 °C	125 °C	420 pF	L-FLAT™	4 mm	5.5 mm	Schottky	Surface Mount	550 mV	40 V	1 mA	10 A	500 ns	200 mA	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16L,HIT,Q)	-40 °C	125 °C	420 pF	L-FLAT™	4 mm	5.5 mm	Schottky	Surface Mount	550 mV	40 V	1 mA	10 A	500 ns	200 mA	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16L,SQC,Q)	-40 °C	125 °C	420 pF	L-FLAT™	4 mm	5.5 mm	Schottky	Surface Mount	550 mV	40 V	1 mA	10 A	500 ns	200 mA	L-FLAT™

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