CLS02(T6L,CLAR,Q)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CLS02(T6L,CLAR,Q)

Capacitance @ Vr, F	420 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	L-FLAT™
Speed	200 mA, 500 ns
Supplier Device Package	L-FLAT™ (4x5.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Technology	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case
Toshiba Semiconductor and Storage CLS02(T6L,CLAR,Q)	10 A	40 V	1 mA	200 mA 500 ns	Schottky	420 pF	Surface Mount	125 °C	-40 °C	550 mV	L-FLAT™ (4x5.5)	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16R,Q)	10 A	40 V	1 mA	200 mA 500 ns	Schottky	420 pF	Surface Mount	125 °C	-40 °C	550 mV	L-FLAT™ (4x5.5)	L-FLAT™
Toshiba Semiconductor and Storage CLS02(T6L,CANO-O,Q	10 A	40 V	1 mA	200 mA 500 ns	Schottky	420 pF	Surface Mount	125 °C	-40 °C	550 mV	L-FLAT™ (4x5.5)	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16L,HIT,Q)	10 A	40 V	1 mA	200 mA 500 ns	Schottky	420 pF	Surface Mount	125 °C	-40 °C	550 mV	L-FLAT™ (4x5.5)	L-FLAT™
Toshiba Semiconductor and Storage CLS02(TE16L,SQC,Q)	10 A	40 V	1 mA	200 mA 500 ns	Schottky	420 pF	Surface Mount	125 °C	-40 °C	550 mV	L-FLAT™ (4x5.5)	L-FLAT™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 10A Surface Mount L-FLAT™ (4x5.5)

Technical documentation and resources