CLS02 Series
Manufacturer: Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 10A L-FLAT
| Part | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Capacitance | Package Name | Package Length | Package Width | Technology | Mounting Type | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Current - Average Rectified (Io) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | -40 °C | 125 °C | 420 pF | L-FLAT™ | 4 mm | 5.5 mm | Schottky | Surface Mount | 550 mV | 40 V | 1 mA | 10 A | 500 ns | 200 mA | L-FLAT™ |
Toshiba Semiconductor and Storage | -40 °C | 125 °C | 420 pF | L-FLAT™ | 4 mm | 5.5 mm | Schottky | Surface Mount | 550 mV | 40 V | 1 mA | 10 A | 500 ns | 200 mA | L-FLAT™ |
Toshiba Semiconductor and Storage | -40 °C | 125 °C | 420 pF | L-FLAT™ | 4 mm | 5.5 mm | Schottky | Surface Mount | 550 mV | 40 V | 1 mA | 10 A | 500 ns | 200 mA | L-FLAT™ |
Toshiba Semiconductor and Storage | -40 °C | 125 °C | 420 pF | L-FLAT™ | 4 mm | 5.5 mm | Schottky | Surface Mount | 550 mV | 40 V | 1 mA | 10 A | 500 ns | 200 mA | L-FLAT™ |
Toshiba Semiconductor and Storage | -40 °C | 125 °C | 420 pF | L-FLAT™ | 4 mm | 5.5 mm | Schottky | Surface Mount | 550 mV | 40 V | 1 mA | 10 A | 500 ns | 200 mA | L-FLAT™ |