DIODE SCHOTTKY 40V 10A L-FLAT
| Part | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Speed | Technology | Capacitance @ Vr, F | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 A | 40 V | 1 mA | 200 mA 500 ns | Schottky | 420 pF | Surface Mount | 125 °C | -40 °C | 550 mV | L-FLAT™ (4x5.5) | L-FLAT™ |
Toshiba Semiconductor and Storage | 10 A | 40 V | 1 mA | 200 mA 500 ns | Schottky | 420 pF | Surface Mount | 125 °C | -40 °C | 550 mV | L-FLAT™ (4x5.5) | L-FLAT™ |
Toshiba Semiconductor and Storage | 10 A | 40 V | 1 mA | 200 mA 500 ns | Schottky | 420 pF | Surface Mount | 125 °C | -40 °C | 550 mV | L-FLAT™ (4x5.5) | L-FLAT™ |
Toshiba Semiconductor and Storage | 10 A | 40 V | 1 mA | 200 mA 500 ns | Schottky | 420 pF | Surface Mount | 125 °C | -40 °C | 550 mV | L-FLAT™ (4x5.5) | L-FLAT™ |
Toshiba Semiconductor and Storage | 10 A | 40 V | 1 mA | 200 mA 500 ns | Schottky | 420 pF | Surface Mount | 125 °C | -40 °C | 550 mV | L-FLAT™ (4x5.5) | L-FLAT™ |