IRS2117STRPBF

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Infineon Technologies

THE IRS2117S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH SINGLE INPUT (8 LEAD SOIC PACKAGE)

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IRS2117STRPBF

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Infineon Technologies

THE IRS2117S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH SINGLE INPUT (8 LEAD SOIC PACKAGE)

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2117STRPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	75 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2117 Series

Part	Number of Drivers	Input Type	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Supplier Device Package	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2117PBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-PDIP	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Through Hole	20 V	10 VDC	0.3 in	8-DIP	7.62 mm
Infineon Technologies IRS2117STRPBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-SOIC	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Surface Mount	20 V	10 VDC		8-SOIC		3.9 mm	0.154 in
Infineon Technologies IRS2117PBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-PDIP	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Through Hole	20 V	10 VDC	0.3 in	8-DIP	7.62 mm
Infineon Technologies IRS2117SPBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-SOIC	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Surface Mount	20 V	10 VDC		8-SOIC		3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.76
		10	$ 1.58
		25	$ 1.49
		100	$ 1.27
		250	$ 1.19
		500	$ 1.04
		1000	$ 0.86
	Digi-Reel®	1	$ 1.76
		10	$ 1.58
		25	$ 1.49
		100	$ 1.27
		250	$ 1.19
		500	$ 1.04
		1000	$ 0.86
	Tape & Reel (TR)	2500	$ 0.74

Description

General part information

IRS2117 Series

EiceDRIVER™ 600 V high sidegate driver ICwith typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP.

Documents

Technical documentation and resources

No documents available