IRS2117 Series

Catalog

IC GATE DRVR HIGH-SIDE 8DIP

Part	Number of Drivers	Input Type	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Supplier Device Package	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2117PBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-PDIP	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Through Hole	20 V	10 VDC	0.3 in	8-DIP	7.62 mm
Infineon Technologies IRS2117STRPBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-SOIC	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Surface Mount	20 V	10 VDC		8-SOIC		3.9 mm	0.154 in
Infineon Technologies IRS2117PBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-PDIP	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Through Hole	20 V	10 VDC	0.3 in	8-DIP	7.62 mm
Infineon Technologies IRS2117SPBF	1	Non-Inverting	Single	35 ns	75 ns	High-Side	8-SOIC	IGBT N-Channel MOSFET	290 mA	600 mA	150 °C	-40 °C	600 V	9.5 V	6 V	Surface Mount	20 V	10 VDC		8-SOIC		3.9 mm	0.154 in