SSM6K518NU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 6A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 6A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K518NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6K518NU,LF	150 °C	1 V	20 V	8 V	3.6 nC	33 mOhm	N-Channel	1.25 W	1.5 V 4.5 V	MOSFET (Metal Oxide)	6-UDFNB (2x2)	6 A	Surface Mount	410 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources