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MOSFET N-CH 20V 6A 6UDFNB
| Part | Operating Temperature | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 1 V | 20 V | 8 V | 3.6 nC | 33 mOhm | N-Channel | 1.25 W | 1.5 V 4.5 V | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | 6 A | Surface Mount | 410 pF |