BUK4D110-20PX

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.4A AUTOMOTIVE AEC-Q101 6-PIN DFN-MD EP T/R

Find alt

Alpha

BUK4D110-20PX

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 20V 3.4A AUTOMOTIVE AEC-Q101 6-PIN DFN-MD EP T/R

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BUK4D110-20P Series

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK4D110-20PX

Current - Continuous Drain (Id) (Ta)	3.4 A
Current - Continuous Drain (Id) (Tc)	6.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	8 V
FET Type	P-Channel
Gate Charge (Max)	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	7.5 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	96 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.3 V

BUK4D110-20P Series

20 V, P-channel Trench MOSFET

Part	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Grade	Rds On (Max)	Package Name	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)	Package / Case	Qualification
Nexperia USA Inc. BUK4D110-20PX	6.7 A	3.4 A	12 V	Automotive	96 mOhm	DFN2020MD-6	5 nC	MOSFET (Metal Oxide)	20 V	P-Channel	Surface Mount	-55 °C	175 °C	2 W 7.5 W	365 pF	2.5 V	8 V	1.3 V	6-UDFN Exposed Pad	AEC-Q101