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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Vgs (Max) | Grade | Rds On (Max) | Package Name | Gate Charge (Max) | Technology | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs(th) (Max) | Package / Case | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6.7 A | 3.4 A | 12 V | Automotive | 96 mOhm | DFN2020MD-6 | 5 nC | MOSFET (Metal Oxide) | 20 V | P-Channel | Surface Mount | -55 °C | 175 °C | 2 W 7.5 W | 365 pF | 2.5 V | 8 V | 1.3 V | 6-UDFN Exposed Pad | AEC-Q101 |