IRF1405STRLPBF

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Infineon Technologies

MOSFET, N-CH, 55V, 131A, TO-263AB ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 55V, 131A, TO-263AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1405STRLPBF

Current - Continuous Drain (Id) @ 25°C	131 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	5480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IRF1405PBF	20 V	169 A	330 W	4 V	TO-220-3	Through Hole	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	TO-220AB
Infineon Technologies IRF1405STRLPBF	20 V	131 A	200 W	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	D2PAK
Infineon Technologies IRF1405ZPBF	20 V	75 A		4 V	TO-220-3	Through Hole	55 V	10 V	-55 °C	175 ░C			180 nC	N-Channel	MOSFET (Metal Oxide)	TO-220AB	4780 pF	4.9 mOhm	230 W
Infineon Technologies IRF1405STRRPBF	20 V	131 A	200 W	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	D2PAK

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